Infineon, NVIDIA Expand GaN Power Collaboration

Infineon Technologies and NVIDIA expanded their collaboration on AI data center power delivery on October 21 at NVIDIA’s GTC developer conference in Berlin. They will jointly develop high-voltage intermediate bus converter (IBC) solutions using gallium nitride (GaN) power devices for 800V direct current (800V DC) architectures. The solutions are intended for NVIDIA’s MGX open modular reference architecture for AI factories.

The work builds on an 800V DC initiative the companies launched in 2025 and targets power conversion for high-power AI racks. Infineon plans to use its CoolGaN portfolio and high-frequency switching for conversion configurations including 800V-to-50V and 800V-to-12V. The architecture is designed for systems consuming up to 1 MW per rack, with deployment expected to begin gradually in 2027.

The expansion emphasizes GaN for intermediate bus conversion. The companies say the solutions aim to increase power density, reduce power losses across the delivery chain and lower cooling hardware requirements. They are also designed for controlled pre-charging and discharging of server motherboards, and hot-swapping while a rack remains operational, which can help reduce service disruption risks during maintenance.

Infineon and NVIDIA first announced their 800V DC data center power collaboration in May 2025, covering both silicon carbide (SiC) and GaN. Beyond GaN-based IBCs, Infineon supplies SiC devices, power protection components and other power products for NVIDIA’s 800V DC ecosystem, spanning delivery from the grid to AI processors. NVIDIA’s architecture is intended to simplify the multiple AC-to-DC and DC-to-DC conversion stages in conventional data centers, reducing the number of stages and associated components. The ecosystem includes power semiconductor suppliers, power system manufacturers and data center infrastructure providers; Infineon offers SiC, GaN and silicon-based power devices.

Infineon Technologies and NVIDIA expanded their collaboration on AI data center power delivery on October 21 at NVIDIA’s GTC developer conference in Berlin. They will jointly develop high-voltage intermediate bus converter (IBC) solutions using gallium nitride (GaN) power devices for 800V direct current (800V DC) architectures. The solutions are intended for NVIDIA’s MGX open modular reference architecture for AI factories.

The work builds on an 800V DC initiative the companies launched in 2025 and targets power conversion for high-power AI racks. Infineon plans to use its CoolGaN portfolio and high-frequency switching for conversion configurations including 800V-to-50V and 800V-to-12V. The architecture is designed for systems consuming up to 1 MW per rack, with deployment expected to begin gradually in 2027.

The expansion emphasizes GaN for intermediate bus conversion. The companies say the solutions aim to increase power density, reduce power losses across the delivery chain and lower cooling hardware requirements. They are also designed for controlled pre-charging and discharging of server motherboards, and hot-swapping while a rack remains operational, which can help reduce service disruption risks during maintenance.

Infineon and NVIDIA first announced their 800V DC data center power collaboration in May 2025, covering both silicon carbide (SiC) and GaN. Beyond GaN-based IBCs, Infineon supplies SiC devices, power protection components and other power products for NVIDIA’s 800V DC ecosystem, spanning delivery from the grid to AI processors. NVIDIA’s architecture is intended to simplify the multiple AC-to-DC and DC-to-DC conversion stages in conventional data centers, reducing the number of stages and associated components. The ecosystem includes power semiconductor suppliers, power system manufacturers and data center infrastructure providers; Infineon offers SiC, GaN and silicon-based power devices.